AO4850 Specs and Replacement
Type Designator: AO4850
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SO-8
AO4850 substitution
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AO4850 datasheet
ao4850.pdf
AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide VDS (V) = 75V excellent RDS(ON) and low gate charge. The two MOSFETs ID = 3.1A (VGS = 10V) may be used in H-bridge, Inverters and other applications. RDS(ON) ... See More ⇒
ao4850.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4850 (KO4850) SOP-8 Unit mm Features VDS (V) = 75V ID = 3.1A (VGS = 10V) 1.50 0.15 RDS(ON) 130m (VGS = 10V) RDS(ON) 165m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec Steady State Unit Drain-Source Voltage VD... See More ⇒
ao4854.pdf
AO4854 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 8A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V) ... See More ⇒
ao4852.pdf
AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. As a pair ID = 3.5A (VGS = 10V) these MOSFETs operate very efficiently in Push Pull RDS(ON) ... See More ⇒
Detailed specifications: AO4822A, AO4826, AO4828, AO4830, AO4832, AO4838, AO4840, AO4842, IRF640, AO4852, AO4854, AO4862, AO4882, AO4884, AO4886, AO4892, AO4914
Keywords - AO4850 MOSFET specs
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History: CS4N80F | HM5N30PR
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