AO4924 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO4924 Datasheet (PDF)

..1. Size:256K aosemi
ao4924.pdf pdf_icon

AO4924Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4924 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

..2. Size:2020K kexin
ao4924.pdf pdf_icon

SMD Type MOSFETDual N-Channel MOSFETAO4924 (KO4924)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 15.8m (VGS = 10V) RDS(ON) 19.5m (VGS = 4.5V)1 S1 5 D2 SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode6 D22 G1N-Channel 2 7 D13 S28 D14 G2 VDS (V) = 30V ID = 7.3 A (VGS =

9.1. Size:237K aosemi
ao4928.pdf pdf_icon

AO4928Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4928 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30VMOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V)synchronous rectifier combination for use in DC-DCRDS(ON)

9.2. Size:239K aosemi
ao4926.pdf pdf_icon

AO4926Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4926 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)