AO4924 Todos los transistores

 

AO4924 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO4924
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9(7.3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.7(3.5) nS
   Cossⓘ - Capacitancia de salida: 224(88) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0158(0.024) Ohm
   Paquete / Cubierta: SO-8
 

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AO4924 Datasheet (PDF)

 ..1. Size:256K  aosemi
 ao4924.pdf pdf_icon

AO4924

AO4924Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4924 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

 ..2. Size:2020K  kexin
 ao4924.pdf pdf_icon

AO4924

SMD Type MOSFETDual N-Channel MOSFETAO4924 (KO4924)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 15.8m (VGS = 10V) RDS(ON) 19.5m (VGS = 4.5V)1 S1 5 D2 SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode6 D22 G1N-Channel 2 7 D13 S28 D14 G2 VDS (V) = 30V ID = 7.3 A (VGS =

 9.1. Size:237K  aosemi
 ao4928.pdf pdf_icon

AO4924

AO4928Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4928 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30VMOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V)synchronous rectifier combination for use in DC-DCRDS(ON)

 9.2. Size:239K  aosemi
 ao4926.pdf pdf_icon

AO4924

AO4926Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4926 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

MOSTRAR MÁS

Otros transistores... AO4854 , AO4862 , AO4882 , AO4884 , AO4886 , AO4892 , AO4914 , AO4922 , IRFB4110 , AO4932 , AO4938 , AO4940 , AO4948 , AO4952 , AO5401E , AO5404E , AO5600E .

History: NVMFS5C406N | HM2015DN03Q | HM20N60A | AP5600N | KI1903DL | 2N7002BKV | 2SK1727

 

 
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