AO4924 MOSFET Datasheet: N-Ch, 30V, 9(7.3)A. Full specification with pinout and replacement list

AO4924 Specs and Replacement

Type Designator: AO4924

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9(7.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.7(3.5) nS

Cossⓘ - Output Capacitance: 224(88) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0158(0.024) Ohm

Package: SO-8

AO4924 substitution

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AO4924 datasheet

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AO4924 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4924 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON) ... See More ⇒

..2. Size:2020K kexin
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SMD Type MOSFET Dual N-Channel MOSFET AO4924 (KO4924) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V ID = 9 A (VGS = 10V) 1.50 0.15 RDS(ON) 15.8m (VGS = 10V) RDS(ON) 19.5m (VGS = 4.5V) 1 S1 5 D2 SRFETTM Soft Recovery MOSFET Integrated Schottky Diode 6 D2 2 G1 N-Channel 2 7 D1 3 S2 8 D1 4 G2 VDS (V) = 30V ID = 7.3 A (VGS =... See More ⇒

9.1. Size:237K aosemi
ao4928.pdf pdf_icon

AO4928 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4928 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30V MOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V) synchronous rectifier combination for use in DC-DC RDS(ON) ... See More ⇒

9.2. Size:239K aosemi
ao4926.pdf pdf_icon

AO4926 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4926 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON) ... See More ⇒