AO5401E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO5401E
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 17 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: SC89-3
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AO5401E Datasheet (PDF)
ao5401e.pdf

AO5401EP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5401E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -0.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)
tpao5401el.pdf

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ao5404e.pdf

AO5404EN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5404E/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
ao5404e.pdf

AO5404Ewww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) 100 % Rg tested0.270 at VGS = 4.5 V0.7520 1.4 nC0.390 at VGS = 2.5 V0.70APPLICATIONS Smart phones, tablet PCs- DC/DC converters- Boost converters- Load switch, OVP switchSC-75 DG1G3 DS 2Top ViewS
Otros transistores... AO4914 , AO4922 , AO4924 , AO4932 , AO4938 , AO4940 , AO4948 , AO4952 , AON7408 , AO5404E , AO5600E , AO5800E , AO5803E , AO5804E , AO6400 , AO6401 , AO6401A .
History: QS5U23 | HSS3401A | IRHF7110 | APT30M17JFLL | IRFS5615PBF | TPCP8003-H | AP4435GJ-HF
History: QS5U23 | HSS3401A | IRHF7110 | APT30M17JFLL | IRFS5615PBF | TPCP8003-H | AP4435GJ-HF



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