All MOSFET. AO5401E Datasheet

 

AO5401E Datasheet and Replacement


   Type Designator: AO5401E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SC89-3
 

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AO5401E Datasheet (PDF)

 ..1. Size:153K  aosemi
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AO5401E

AO5401EP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5401E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -0.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

 0.1. Size:358K  cn tech public
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AO5401E

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 9.1. Size:189K  aosemi
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AO5401E

AO5404EN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5404E/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

 9.2. Size:1735K  cn vbsemi
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AO5401E

AO5404Ewww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) 100 % Rg tested0.270 at VGS = 4.5 V0.7520 1.4 nC0.390 at VGS = 2.5 V0.70APPLICATIONS Smart phones, tablet PCs- DC/DC converters- Boost converters- Load switch, OVP switchSC-75 DG1G3 DS 2Top ViewS

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Datasheet: AO4914 , AO4922 , AO4924 , AO4932 , AO4938 , AO4940 , AO4948 , AO4952 , AON7408 , AO5404E , AO5600E , AO5800E , AO5803E , AO5804E , AO6400 , AO6401 , AO6401A .

History: SI4622DY | VBZL80N03

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