AO5800E Todos los transistores

 

AO5800E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO5800E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35.7 nS

Cossⓘ - Capacitancia de salida: 9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: SC89-6

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AO5800E datasheet

 ..1. Size:159K  aosemi
 ao5800e.pdf pdf_icon

AO5800E

AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON), low gate charge, and ID = 0.4A (VGS = 10V) operation with gate voltages as low as 4.5V, in the RDS(ON)

 9.1. Size:111K  aosemi
 ao5803e.pdf pdf_icon

AO5800E

AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge, and ID = -0.6A (VGS = -4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON)

 9.2. Size:201K  aosemi
 ao5804e.pdf pdf_icon

AO5800E

AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

Otros transistores... AO4932, AO4938, AO4940, AO4948, AO4952, AO5401E, AO5404E, AO5600E, AON7408, AO5803E, AO5804E, AO6400, AO6401, AO6401A, AO6402, AO6402A, AO6403

 

 

 

 

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