AO5800E Todos los transistores

 

AO5800E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO5800E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35.7 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: SC89-6
 

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AO5800E Datasheet (PDF)

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AO5800E

AO5800EDual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO5800E uses advanced trench technology toVDS (V) = 60Vprovide excellent RDS(ON), low gate charge, andID = 0.4A (VGS = 10V)operation with gate voltages as low as 4.5V, in theRDS(ON)

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AO5800E

AO5803EDual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5803E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge, andID = -0.6A (VGS = -4.5V)operation with gate voltages as low as 1.8V, in theRDS(ON)

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AO5800E

AO5804EDual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5804E/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

Otros transistores... AO4932 , AO4938 , AO4940 , AO4948 , AO4952 , AO5401E , AO5404E , AO5600E , 2N7000 , AO5803E , AO5804E , AO6400 , AO6401 , AO6401A , AO6402 , AO6402A , AO6403 .

History: TSM2303CX | STY130NF20D | FTK8N65P | AOW15S60 | MIC94050YM4TR | S60N12RP | NTMFS4823NT1G

 

 
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