AO5800E Datasheet and Replacement. Cross Reference Search

AO5800E Datasheet (PDF)

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AO5800EDual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO5800E uses advanced trench technology toVDS (V) = 60Vprovide excellent RDS(ON), low gate charge, andID = 0.4A (VGS = 10V)operation with gate voltages as low as 4.5V, in theRDS(ON)

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AO5803EDual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5803E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge, andID = -0.6A (VGS = -4.5V)operation with gate voltages as low as 1.8V, in theRDS(ON)

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AO5804EDual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5804E/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

Datasheet: AO4932 , AO4938 , AO4940 , AO4948 , AO4952 , AO5401E , AO5404E , AO5600E , 2N7000 , AO5803E , AO5804E , AO6400 , AO6401 , AO6401A , AO6402 , AO6402A , AO6403 .