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AO6800 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO6800

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.15 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 3.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.5 V

Tiempo de elevación (tr): 1.5 nS

Conductancia de drenaje-sustrato (Cd): 35 pF

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: TSOP-6

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AO6800 Datasheet (PDF)

1.1. ao6800.pdf Size:228K _aosemi

AO6800
AO6800

AO6800 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 3.4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= 10V) < 60mΩ a load switch or in PWM applications. RDS(ON) (at VGS = 4.5V) < 70mΩ RDS(ON)

1.2. ao6800.pdf Size:1361K _kexin

AO6800
AO6800

SMD Type MOSFET Dual N-Channel MOSFET AO6800 (KO6800) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features 6 5 4 ● VDS (V) = 30V ● ID =3.4 A (VGS = 10V) ● RDS(ON) < 60mΩ (VGS = 10V) 2 3 1 ● RDS(ON) < 70mΩ (VGS = 4.5V) +0.02 0.15 -0.02 +0.01 ● RDS(ON) < 90mΩ (VGS = 2.5V) -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1 G2

 5.1. ao6806.pdf Size:204K _update

AO6800
AO6800

AO6806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6806 uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and ID = 5.0A (VGS = 4.5V) operation with gate voltages as low as 2.5V. This device RDS(ON) < 33mΩ (VGS = 4.5V) is suitable for use as a load switch or in PWM RDS(ON) < 34mΩ (VGS = 4.0V) app

5.2. ao6802.pdf Size:199K _aosemi

AO6800
AO6800

AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to VDS 30V provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 3.5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V) < 50mΩ applications. RDS(ON) (at VGS = 4.5V) < 70mΩ D1 D2 TSOP6 Top View Bottom View Top View G1 1 D1

 5.3. ao6801e.pdf Size:303K _aosemi

AO6800
AO6800

AO6801E 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) < 110mΩ and battery protection applications. RDS(ON) (at VGS=-4.5V) < 135mΩ RDS(ON) (at VGS=-2.5V) <

5.4. ao6801a.pdf Size:331K _aosemi

AO6800
AO6800

AO6801A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V) < 115mΩ applications. RDS(ON) (at VGS =-4.5V) < 150mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ TSOP6 D1

 5.5. ao6804a.pdf Size:198K _aosemi

AO6800
AO6800

AO6804A 20V Dual N-Channel MOSFET General Description Product Summary The AO6804A uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and operation ID = 5.0A (VGS = 4.5V) with gate voltages as low as 2.5V. This device is RDS(ON) < 28mΩ (VGS = 4.5V) suitable for use as a load switch applications. RDS(ON) < 30mΩ (VGS = 4.0V) RDS(ON) < 34mΩ (VGS

5.6. ao6808.pdf Size:280K _aosemi

AO6800
AO6800

AO6808 20V Dual N-Channel MOSFET General Description Product Summary The AO6808 uses advanced trench technology to provide excellent VDS = 20V RDS(ON), low gate charge and operation with gate voltages as low as ID = 6A (VGS = 4.5V) 2.5V. This device is suitable for use as a load switch. It is ESD RDS(ON) = 19mΩ (typical) (VGS = 4.5V) protected. RDS(ON) = 20mΩ (typical) (VGS = 4.0V) R

5.7. ao6801.pdf Size:270K _aosemi

AO6800
AO6800

AO6801 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V) < 115mΩ applications. RDS(ON) (at VGS =-4.5V) < 150mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ TSOP6 D1 D2

5.8. ao6802.pdf Size:1032K _kexin

AO6800
AO6800

SMD Type MOSFET Dual N-Channel MOSFET AO6802 (KO6802) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features 6 5 4 ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON) < 50mΩ (VGS = 10V) ● RDS(ON) < 70mΩ (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1 G2 S1 S2 ■ Absolute Maximum Ratings

5.9. ao6801e.pdf Size:1879K _kexin

AO6800
AO6800

SMD Type MOSFET Dual P-Channel MOSFET AO6801E (KO6801E) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features ● VDS (V) =-30V 6 5 4 ● ID =-2A (VGS =-10V) ● RDS(ON) < 110mΩ (VGS =-10V) ● RDS(ON) < 135mΩ (VGS =-4.5V) 2 3 1 ● RDS(ON) < 185mΩ (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 ● ESD Rating: 2000V HBM +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 S

5.10. ao6801a.pdf Size:1239K _kexin

AO6800
AO6800

SMD Type MOSFET Dual P-Channel MOSFET AO6801A (KO6801A) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features ● VDS (V) =-30V 5 4 6 ● ID =-2.3A (VGS =-10V) ● RDS(ON) < 115mΩ (VGS =-10V) ● RDS(ON) < 150mΩ (VGS =-4.5V) 2 3 1 ● RDS(ON) < 200mΩ (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1

5.11. ao6804.pdf Size:1443K _kexin

AO6800
AO6800

SMD Type MOSFET Dual N-Channel MOSFET AO6804 (KO6804) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features 6 5 4 ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON) < 32mΩ (VGS = 4.5V) ● RDS(ON) < 34mΩ (VGS = 4V) 2 3 1 +0.02 ● RDS(ON) < 37mΩ (VGS = 3.1V) 0.15 -0.02 +0.01 -0.01 ● RDS(ON) < 42mΩ (VGS = 2.5V) +0.2 -0.1 D1 D2 1 S1 4 G2 2 D1/D2 5 D1/D2

5.12. ao6804a.pdf Size:1678K _kexin

AO6800
AO6800

SMD Type MOSFET Dual N-Channel MOSFET AO6804A (KO6804A) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features ● VDS (V) = 20V 6 5 4 ● ID =5 A (VGS = 4.5V) ● RDS(ON) < 28mΩ (VGS = 4.5V) ● RDS(ON) < 30mΩ (VGS = 4V) 2 3 1 ● RDS(ON) < 34mΩ (VGS = 3.1V) +0.02 0.15 -0.02 +0.01 -0.01 ● RDS(ON) < 39mΩ (VGS = 2.5V) +0.2 -0.1 ● ESD Rating: 2000V HBM 1 S1

5.13. ao6808.pdf Size:1940K _kexin

AO6800
AO6800

SMD Type MOSFET Dual N-Channel MOSFET AO6808 (KO6808) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features 6 5 4 ● VDS (V) = 20V ● ID =6 A (VGS = 4.5V) ● RDS(ON) < 23mΩ (VGS = 4.5V) ● RDS(ON) < 25mΩ (VGS = 4V) 2 3 1 +0.02 ● RDS(ON) < 27mΩ (VGS = 3.1V) 0.15 -0.02 +0.01 -0.01 ● RDS(ON) < 30mΩ (VGS = 2.5V) +0.2 -0.1 ● ESD Rating: 2000V HBM 1 S1 4

5.14. ao6801.pdf Size:1386K _kexin

AO6800
AO6800

SMD Type MOSFET Dual P-Channel MOSFET AO6801 (KO6801) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features 6 5 4 ● VDS (V) =-30V ● ID =-2.3A (VGS =-10V) ● RDS(ON) < 115mΩ (VGS =-10V) ● RDS(ON) < 150mΩ (VGS =-4.5V) 2 3 1 ● RDS(ON) < 200mΩ (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1

Otros transistores... AO6420 , AO6422 , AO6424 , AO6424A , AO6432 , AO6601 , AO6602 , AO6604 , IRF250 , AO6801 , AO6801A , AO6801E , AO6802 , AO6804A , AO6808 , AO6810 , AO7400 .

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