AO6800 Datasheet and Replacement

AO680030V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO6800 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 3.4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= 10V)

SMD Type MOSFETDual N-Channel MOSFETAO6800 (KO6800)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID =3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)2 31 RDS(ON) 70m (VGS = 4.5V)+0.020.15 -0.02+0.01 RDS(ON) 90m (VGS = 2.5V) -0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1 G2

AO680130V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

AO680230V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO6802 uses advanced trench technology to VDS30Vprovide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 3.5Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

AO6801A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

AO6806Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO6806 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and ID = 5.0A (VGS = 4.5V)operation with gate voltages as low as 2.5V. This deviceRDS(ON)

AO6804A20V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO6804A uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and operationID = 5.0A (VGS = 4.5V)with gate voltages as low as 2.5V. This device isRDS(ON)

AO680820V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO6808 uses advanced trench technology to provide excellent VDS = 20VRDS(ON), low gate charge and operation with gate voltages as low as ID = 6A (VGS = 4.5V)2.5V. This device is suitable for use as a load switch. It is ESD RDS(ON) = 19m (typical) (VGS = 4.5V)protected. RDS(ON) = 20m (typical) (VGS = 4.0V)R

AO6801E30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AO6801E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

SMD Type MOSFETDual N-Channel MOSFETAO6804 (KO6804)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID =5 A (VGS = 4.5V) RDS(ON) 32m (VGS = 4.5V) RDS(ON) 34m (VGS = 4V)2 31+0.02 RDS(ON) 37m (VGS = 3.1V)0.15 -0.02+0.01-0.01 RDS(ON) 42m (VGS = 2.5V)+0.2-0.1D1 D21 S1 4 G22 D1/D2 5 D1/D2

SMD Type MOSFETDual P-Channel MOSFETAO6801 (KO6801)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V) +0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1

SMD Type MOSFETDual N-Channel MOSFETAO6802 (KO6802)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID =3.5 A (VGS = 10V) RDS(ON) 50m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1 G2S1 S2 Absolute Maximum Ratings

SMD Type MOSFETDual P-Channel MOSFETAO6801A (KO6801A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 5 46 ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1

SMD Type MOSFETDual N-Channel MOSFETAO6804A (KO6804A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) = 20V 6 5 4 ID =5 A (VGS = 4.5V) RDS(ON) 28m (VGS = 4.5V) RDS(ON) 30m (VGS = 4V)2 31 RDS(ON) 34m (VGS = 3.1V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 39m (VGS = 2.5V)+0.2-0.1 ESD Rating: 2000V HBM1 S1

SMD Type MOSFETDual N-Channel MOSFETAO6808 (KO6808)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID =6 A (VGS = 4.5V) RDS(ON) 23m (VGS = 4.5V) RDS(ON) 25m (VGS = 4V)2 31+0.02 RDS(ON) 27m (VGS = 3.1V)0.15 -0.02+0.01-0.01 RDS(ON) 30m (VGS = 2.5V)+0.2-0.1 ESD Rating: 2000V HBM1 S1 4

SMD Type MOSFETDual P-Channel MOSFETAO6801E (KO6801E)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 6 5 4 ID =-2A (VGS =-10V) RDS(ON) 110m (VGS =-10V) RDS(ON) 135m (VGS =-4.5V)2 31 RDS(ON) 185m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01 ESD Rating: 2000V HBM+0.2-0.1D1 D2 1 Gate1 4 Drain22 Source2 5 S

AO6801Awww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable App