AO6800 - описание и поиск аналогов

AO6800 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 3.4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= 10V)

SMD Type MOSFET Dual N-Channel MOSFET AO6800 (KO6800) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 30V ID =3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) 2 3 1 RDS(ON) 70m (VGS = 4.5V) +0.02 0.15 -0.02 +0.01 RDS(ON) 90m (VGS = 2.5V) -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1 G2

AO6801 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to VDS 30V provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 3.5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

AO6801A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

AO6806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6806 uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and ID = 5.0A (VGS = 4.5V) operation with gate voltages as low as 2.5V. This device RDS(ON)

AO6804A 20V Dual N-Channel MOSFET General Description Product Summary The AO6804A uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and operation ID = 5.0A (VGS = 4.5V) with gate voltages as low as 2.5V. This device is RDS(ON)

AO6808 20V Dual N-Channel MOSFET General Description Product Summary The AO6808 uses advanced trench technology to provide excellent VDS = 20V RDS(ON), low gate charge and operation with gate voltages as low as ID = 6A (VGS = 4.5V) 2.5V. This device is suitable for use as a load switch. It is ESD RDS(ON) = 19m (typical) (VGS = 4.5V) protected. RDS(ON) = 20m (typical) (VGS = 4.0V) R

AO6801E 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

SMD Type MOSFET Dual N-Channel MOSFET AO6804 (KO6804) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID =5 A (VGS = 4.5V) RDS(ON) 32m (VGS = 4.5V) RDS(ON) 34m (VGS = 4V) 2 3 1 +0.02 RDS(ON) 37m (VGS = 3.1V) 0.15 -0.02 +0.01 -0.01 RDS(ON) 42m (VGS = 2.5V) +0.2 -0.1 D1 D2 1 S1 4 G2 2 D1/D2 5 D1/D2

SMD Type MOSFET Dual P-Channel MOSFET AO6801 (KO6801) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V) 2 3 1 RDS(ON) 200m (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1

SMD Type MOSFET Dual N-Channel MOSFET AO6802 (KO6802) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 30V ID =3.5 A (VGS = 10V) RDS(ON) 50m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1 G2 S1 S2 Absolute Maximum Ratings

SMD Type MOSFET Dual P-Channel MOSFET AO6801A (KO6801A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-30V 5 4 6 ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V) 2 3 1 RDS(ON) 200m (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1

SMD Type MOSFET Dual N-Channel MOSFET AO6804A (KO6804A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) = 20V 6 5 4 ID =5 A (VGS = 4.5V) RDS(ON) 28m (VGS = 4.5V) RDS(ON) 30m (VGS = 4V) 2 3 1 RDS(ON) 34m (VGS = 3.1V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 39m (VGS = 2.5V) +0.2 -0.1 ESD Rating 2000V HBM 1 S1

SMD Type MOSFET Dual N-Channel MOSFET AO6808 (KO6808) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID =6 A (VGS = 4.5V) RDS(ON) 23m (VGS = 4.5V) RDS(ON) 25m (VGS = 4V) 2 3 1 +0.02 RDS(ON) 27m (VGS = 3.1V) 0.15 -0.02 +0.01 -0.01 RDS(ON) 30m (VGS = 2.5V) +0.2 -0.1 ESD Rating 2000V HBM 1 S1 4

SMD Type MOSFET Dual P-Channel MOSFET AO6801E (KO6801E) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-30V 6 5 4 ID =-2A (VGS =-10V) RDS(ON) 110m (VGS =-10V) RDS(ON) 135m (VGS =-4.5V) 2 3 1 RDS(ON) 185m (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 ESD Rating 2000V HBM +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 S

AO6801A www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable App