AO6801E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO6801E
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 42 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: TSOP-6
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AO6801E Datasheet (PDF)
ao6801e.pdf
AO6801E30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AO6801E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
ao6801e.pdf
SMD Type MOSFETDual P-Channel MOSFETAO6801E (KO6801E)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 6 5 4 ID =-2A (VGS =-10V) RDS(ON) 110m (VGS =-10V) RDS(ON) 135m (VGS =-4.5V)2 31 RDS(ON) 185m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01 ESD Rating: 2000V HBM+0.2-0.1D1 D2 1 Gate1 4 Drain22 Source2 5 S
ao6801.pdf
AO680130V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)
ao6801a.pdf
AO6801A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)
ao6801.pdf
SMD Type MOSFETDual P-Channel MOSFETAO6801 (KO6801)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V) +0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1
ao6801a.pdf
SMD Type MOSFETDual P-Channel MOSFETAO6801A (KO6801A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 5 46 ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1
ao6801a.pdf
AO6801Awww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable App
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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