AO6801E Todos los transistores

 ..1. Size:303K  aosemi
 ao6801e.pdf

AO6801E 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 ..2. Size:1879K  kexin
 ao6801e.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO6801E (KO6801E) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-30V 6 5 4 ID =-2A (VGS =-10V) RDS(ON) 110m (VGS =-10V) RDS(ON) 135m (VGS =-4.5V) 2 3 1 RDS(ON) 185m (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 ESD Rating 2000V HBM +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 S

 8.1. Size:270K  aosemi
 ao6801.pdf

AO6801 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

 8.2. Size:331K  aosemi
 ao6801a.pdf

AO6801A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

 8.3. Size:1386K  kexin
 ao6801.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO6801 (KO6801) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V) 2 3 1 RDS(ON) 200m (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1

 8.4. Size:1239K  kexin
 ao6801a.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO6801A (KO6801A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-30V 5 4 6 ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V) 2 3 1 RDS(ON) 200m (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1

 8.5. Size:1785K  cn vbsemi
 ao6801a.pdf

AO6801A www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable App