Справочник MOSFET. AO6801E

 

AO6801E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AO6801E

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 0.7 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Максимально допустимый постоянный ток стока (Id): 2 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 4 ns

Выходная емкость (Cd): 42 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm

Тип корпуса: TSOP-6

Аналог (замена) для AO6801E

 

 

AO6801E Datasheet (PDF)

1.1. ao6801e.pdf Size:303K _aosemi

AO6801E
AO6801E

AO6801E 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) < 110mΩ and battery protection applications. RDS(ON) (at VGS=-4.5V) < 135mΩ RDS(ON) (at VGS=-2.5V) <

1.2. ao6801e.pdf Size:1879K _kexin

AO6801E
AO6801E

SMD Type MOSFET Dual P-Channel MOSFET AO6801E (KO6801E) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features ● VDS (V) =-30V 6 5 4 ● ID =-2A (VGS =-10V) ● RDS(ON) < 110mΩ (VGS =-10V) ● RDS(ON) < 135mΩ (VGS =-4.5V) 2 3 1 ● RDS(ON) < 185mΩ (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 ● ESD Rating: 2000V HBM +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 S

 4.1. ao6801a.pdf Size:331K _aosemi

AO6801E
AO6801E

AO6801A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V) < 115mΩ applications. RDS(ON) (at VGS =-4.5V) < 150mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ TSOP6 D1

4.2. ao6801.pdf Size:270K _aosemi

AO6801E
AO6801E

AO6801 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V) < 115mΩ applications. RDS(ON) (at VGS =-4.5V) < 150mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ TSOP6 D1 D2

 4.3. ao6801a.pdf Size:1239K _kexin

AO6801E
AO6801E

SMD Type MOSFET Dual P-Channel MOSFET AO6801A (KO6801A) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features ● VDS (V) =-30V 5 4 6 ● ID =-2.3A (VGS =-10V) ● RDS(ON) < 115mΩ (VGS =-10V) ● RDS(ON) < 150mΩ (VGS =-4.5V) 2 3 1 ● RDS(ON) < 200mΩ (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1

4.4. ao6801.pdf Size:1386K _kexin

AO6801E
AO6801E

SMD Type MOSFET Dual P-Channel MOSFET AO6801 (KO6801) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features 6 5 4 ● VDS (V) =-30V ● ID =-2.3A (VGS =-10V) ● RDS(ON) < 115mΩ (VGS =-10V) ● RDS(ON) < 150mΩ (VGS =-4.5V) 2 3 1 ● RDS(ON) < 200mΩ (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1

Другие MOSFET... AO6424A , AO6432 , AO6601 , AO6602 , AO6604 , AO6800 , AO6801 , AO6801A , IRFP4232 , AO6802 , AO6804A , AO6808 , AO6810 , AO7400 , AO7401 , AO7403 , AO7404 .

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MOSFET: PJU8NA50 | PJU7NA65 | PJU7NA60 | PJU6NA70 | PJU6NA40 | PJU5NA80 | PJU5NA50 | PJU4NA90 | PJU4NA70 | PJU4NA65 | PJU4NA60 | PJU3NA80 | PJU3NA50 | PJU2NA70 | PJU2NA60H |
 


 

 

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