AO6801E Specs and Replacement
Type Designator: AO6801E
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TSOP-6
AO6801E substitution
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AO6801E datasheet
ao6801e.pdf
AO6801E 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒
ao6801e.pdf
SMD Type MOSFET Dual P-Channel MOSFET AO6801E (KO6801E) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-30V 6 5 4 ID =-2A (VGS =-10V) RDS(ON) 110m (VGS =-10V) RDS(ON) 135m (VGS =-4.5V) 2 3 1 RDS(ON) 185m (VGS =-2.5V) +0.02 0.15 -0.02 +0.01 -0.01 ESD Rating 2000V HBM +0.2 -0.1 D1 D2 1 Gate1 4 Drain2 2 Source2 5 S... See More ⇒
ao6801.pdf
AO6801 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V) ... See More ⇒
ao6801a.pdf
AO6801A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V) ... See More ⇒
Detailed specifications: AO6424A, AO6432, AO6601, AO6602, AO6604, AO6800, AO6801, AO6801A, IRFP450, AO6802, AO6804A, AO6808, AO6810, AO7400, AO7401, AO7403, AO7404
Keywords - AO6801E MOSFET specs
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