FSS913AOR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FSS913AOR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO257AA

 Búsqueda de reemplazo de FSS913AOR MOSFET

- Selecciónⓘ de transistores por parámetros

 

FSS913AOR datasheet

 6.1. Size:65K  intersil
 fss913ao.pdf pdf_icon

FSS913AOR

FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Features Hardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280 Power MOSFETs Total Dose The Discrete Products Operation of Intersil has developed a - Meets Pre-RAD Specifications to 100K RAD (Si) series of Radiation Hardened MOSFETs specifically designed for commercial an

 8.1. Size:44K  intersil
 fss9130.pdf pdf_icon

FSS913AOR

FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA

Otros transistores... FSS23A4R, FSS23AOD, FSS23AOR, FSS430D, FSS430R, FSS9130D, FSS9130R, FSS913AOD, 4N60, FSS9230D, FSS9230R, FSS923AOD, FSS923AOR, FSYA250D, FSYA250R, GFB50N03, GFB70N03