FSS913AOR Datasheet. Specs and Replacement

Type Designator: FSS913AOR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO257AA

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FSS913AOR datasheet

 6.1. Size:65K  intersil
fss913ao.pdf pdf_icon

FSS913AOR

FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Features Hardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280 Power MOSFETs Total Dose The Discrete Products Operation of Intersil has developed a - Meets Pre-RAD Specifications to 100K RAD (Si) series of Radiation Hardened MOSFETs specifically designed for commercial an... See More ⇒

 8.1. Size:44K  intersil
fss9130.pdf pdf_icon

FSS913AOR

FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒

Detailed specifications: FSS23A4R, FSS23AOD, FSS23AOR, FSS430D, FSS430R, FSS9130D, FSS9130R, FSS913AOD, 4N60, FSS9230D, FSS9230R, FSS923AOD, FSS923AOR, FSYA250D, FSYA250R, GFB50N03, GFB70N03

Keywords - FSS913AOR MOSFET specs

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