All MOSFET. FSS913AOR Datasheet

 

FSS913AOR Datasheet and Replacement


   Type Designator: FSS913AOR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO257AA
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FSS913AOR Datasheet (PDF)

 6.1. Size:65K  intersil
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FSS913AOR

FSS913A0D, FSS913A0RData Sheet June 1999 File Number 4451.310A, -100V, 0.280 Ohm, Radiation FeaturesHardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280Power MOSFETs Total DoseThe Discrete Products Operation of Intersil has developed a- Meets Pre-RAD Specifications to 100K RAD (Si)series of Radiation Hardened MOSFETs specificallydesigned for commercial an

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FSS913AOR

FSS9130D,FSS9130R6A, -100V, 0.660 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

Datasheet: FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD , 13N50 , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 , GFB70N03 .

History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE

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