AOB210L Todos los transistores

 ..1. Size:247K  aosemi
 aob210l.pdf

AOT210L/AOB210L 30V N-Channel MOSFET General Description Product Summary VDS The AOT210L/AOB210L uses Trench MOSFET 30V technology that is uniquely optimized to provide the most 105A ID (at VGS=10V) efficient high frequency switching performance. Power

 ..2. Size:253K  inchange semiconductor
 aob210l.pdf

isc N-Channel MOSFET Transistor AOB210L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

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 aot2144l aob2144l.pdf

AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:372K  aosemi
 aob2146l.pdf

AOT2146L/AOB2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:373K  aosemi
 aob2140l.pdf

AOT2140L/AOB2140L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:384K  aosemi
 aob2144l.pdf

AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:384K  aosemi
 aot2144l aob2144l.pdf

AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:786K  aosemi
 aot2140l aob2140l.pdf

AOT2140L/AOB2140L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.7. Size:460K  aosemi
 aot2146l aob2146l.pdf

AOT2146L/AOB2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.8. Size:253K  inchange semiconductor
 aob2146l.pdf

isc N-Channel MOSFET Transistor AOB2146L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.9. Size:227K  inchange semiconductor
 aob2140l.pdf

isc N-Channel MOSFET Transistor AOB2140L DESCRIPTION Drain Current I = 195A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies (SMPS). ABSOLUTE MAXIMUM RATINGS(T =25 ) C

 9.10. Size:253K  inchange semiconductor
 aob2144l.pdf

isc N-Channel MOSFET Transistor AOB2144L FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp