AOB210L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOB210L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET AOB210L

AOB210L Datasheet (PDF)

..1. Size:247K aosemi
aob210l.pdf

AOT210L/AOB210L30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT210L/AOB210L uses Trench MOSFET 30Vtechnology that is uniquely optimized to provide the most 105A ID (at VGS=10V)efficient high frequency switching performance. Power

..2. Size:253K inchange semiconductor
aob210l.pdf

isc N-Channel MOSFET Transistor AOB210LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:320K 1
aot2144l aob2144l.pdf

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:372K aosemi
aob2146l.pdf

AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.3. Size:373K aosemi
aob2140l.pdf

AOT2140L/AOB2140LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.4. Size:384K aosemi
aob2144l.pdf

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

9.5. Size:253K inchange semiconductor
aob2146l.pdf

isc N-Channel MOSFET Transistor AOB2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.6. Size:227K inchange semiconductor
aob2140l.pdf

isc N-Channel MOSFET Transistor AOB2140LDESCRIPTIONDrain Current I = 195A@ T =25D CDrain Source Voltage: V =40V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies (SMPS).ABSOLUTE MAXIMUM RATINGS(T =25)C

9.7. Size:253K inchange semiconductor
aob2144l.pdf

isc N-Channel MOSFET Transistor AOB2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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