AOB210L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOB210L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 176
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 105
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 1320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026
Ohm
Package:
TO-263
AOB210L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOB210L
Datasheet (PDF)
..1. Size:247K aosemi
aob210l.pdf 
AOT210L/AOB210L30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT210L/AOB210L uses Trench MOSFET 30Vtechnology that is uniquely optimized to provide the most 105A ID (at VGS=10V)efficient high frequency switching performance. Power
..2. Size:253K inchange semiconductor
aob210l.pdf
isc N-Channel MOSFET Transistor AOB210LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.1. Size:320K 1
aot2144l aob2144l.pdf
AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:372K aosemi
aob2146l.pdf
AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:373K aosemi
aob2140l.pdf
AOT2140L/AOB2140LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:384K aosemi
aob2144l.pdf
AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:253K inchange semiconductor
aob2146l.pdf
isc N-Channel MOSFET Transistor AOB2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.6. Size:227K inchange semiconductor
aob2140l.pdf
isc N-Channel MOSFET Transistor AOB2140LDESCRIPTIONDrain Current I = 195A@ T =25D CDrain Source Voltage: V =40V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies (SMPS).ABSOLUTE MAXIMUM RATINGS(T =25)C
9.7. Size:253K inchange semiconductor
aob2144l.pdf
isc N-Channel MOSFET Transistor AOB2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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