AOB210L Datasheet and Replacement
Type Designator: AOB210L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO-263
AOB210L substitution
AOB210L Datasheet (PDF)
aob210l.pdf

AOT210L/AOB210L30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT210L/AOB210L uses Trench MOSFET 30Vtechnology that is uniquely optimized to provide the most 105A ID (at VGS=10V)efficient high frequency switching performance. Power
aob210l.pdf

isc N-Channel MOSFET Transistor AOB210LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
aot2144l aob2144l.pdf

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
aob2146l.pdf

AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOB1404L , AOB14N50 , AOB15S60 , AOB15S65 , AOB1606L , AOB1608L , AOB20C60 , AOB20S60 , IRF640 , AOB240L , AOB2500L , AOB254L , AOB256L , AOB25S65 , AOB2606L , AOB2608L , AOB260L .
History: SFF440 | SIHF9530S | AP9973GJ-HF
Keywords - AOB210L MOSFET datasheet
AOB210L cross reference
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History: SFF440 | SIHF9530S | AP9973GJ-HF



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