Справочник MOSFET. AOB210L

 

AOB210L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB210L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 176 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 1320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для AOB210L

 

 

AOB210L Datasheet (PDF)

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 aob210l.pdf

AOB210L AOB210L

AOT210L/AOB210L30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT210L/AOB210L uses Trench MOSFET 30Vtechnology that is uniquely optimized to provide the most 105A ID (at VGS=10V)efficient high frequency switching performance. Power

 ..2. Size:253K  inchange semiconductor
 aob210l.pdf

AOB210L AOB210L

isc N-Channel MOSFET Transistor AOB210LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:320K  1
 aot2144l aob2144l.pdf

AOB210L AOB210L

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:372K  aosemi
 aob2146l.pdf

AOB210L AOB210L

AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:373K  aosemi
 aob2140l.pdf

AOB210L AOB210L

AOT2140L/AOB2140LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:384K  aosemi
 aob2144l.pdf

AOB210L AOB210L

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:253K  inchange semiconductor
 aob2146l.pdf

AOB210L AOB210L

isc N-Channel MOSFET Transistor AOB2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.6. Size:227K  inchange semiconductor
 aob2140l.pdf

AOB210L AOB210L

isc N-Channel MOSFET Transistor AOB2140LDESCRIPTIONDrain Current I = 195A@ T =25D CDrain Source Voltage: V =40V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies (SMPS).ABSOLUTE MAXIMUM RATINGS(T =25)C

 9.7. Size:253K  inchange semiconductor
 aob2144l.pdf

AOB210L AOB210L

isc N-Channel MOSFET Transistor AOB2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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