AOB270AL Todos los transistores

 ..1. Size:324K  aosemi
 aob270al.pdf

AOT270AL/AOB270AL 75V N-Channel MOSFET General Description Product Summary VDS 75V The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..2. Size:672K  aosemi
 aot270al aob270al.pdf

AOT270AL/AOB270AL 75V N-Channel MOSFET General Description Product Summary VDS 75V The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..3. Size:238K  inchange semiconductor
 aob270al.pdf

isc N-Channel MOSFET Transistor AOB270AL FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R = 2.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 8.1. Size:329K  aosemi
 aob270l.pdf

AOT270L/AOB270L 75V N-Channel MOSFET General Description Product Summary VDS 75V The AOT270L/AOB270L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

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 aot27s60 aob27s60 aotf27s60.pdf

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

 9.2. Size:295K  aosemi
 aob27s60.pdf

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

 9.3. Size:1086K  aosemi
 aot27s60l aob27s60l aotf27s60l aotf27s60.pdf

AOT27S60L/AOB27S60L/AOTF27S60L/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60L & AOB27S60L & AOTF27S60L & AOTF27S60 have been fabricated using the advanced IDM 110A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.16 levels of performance and robustness in switching Qg,typ 26nC applic

 9.4. Size:295K  aosemi
 aob27s60l.pdf

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

 9.5. Size:258K  inchange semiconductor
 aob27s60.pdf

Isc N-Channel MOSFET Transistor AOB27S60 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt