Справочник MOSFET. AOB270AL

 

AOB270AL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB270AL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 147 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 1520 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для AOB270AL

 

 

AOB270AL Datasheet (PDF)

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 aob270al.pdf

AOB270AL AOB270AL

AOT270AL/AOB270AL75V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AOT270AL/AOB270AL uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

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 aob270al.pdf

AOB270AL AOB270AL

isc N-Channel MOSFET Transistor AOB270ALFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 2.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

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 aob270l.pdf

AOB270AL AOB270AL

AOT270L/AOB270L75V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AOT270L/AOB270L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

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 aot27s60 aob27s60 aotf27s60.pdf

AOB270AL AOB270AL

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 9.2. Size:295K  aosemi
 aob27s60.pdf

AOB270AL AOB270AL

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 9.3. Size:295K  aosemi
 aob27s60l.pdf

AOB270AL AOB270AL

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 9.4. Size:258K  inchange semiconductor
 aob27s60.pdf

AOB270AL AOB270AL

Isc N-Channel MOSFET Transistor AOB27S60FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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