FSS923AOR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FSS923AOR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO257AA

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FSS923AOR datasheet

 6.1. Size:45K  harris semi
 fss923ao.pdf pdf_icon

FSS923AOR

FSS923AOD, S E M I C O N D U C T O R FSS923AOR Radiation Hardened, SEGR Resistant February 1998 P-Channel Power MOSFETs Features Description 7A, -200V, rDS(ON) = 0.650 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MOS

 8.1. Size:44K  intersil
 fss9230.pdf pdf_icon

FSS923AOR

FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 4A, -200V, rDS(ON) = 1.60 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD

Otros transistores... FSS430R, FSS9130D, FSS9130R, FSS913AOD, FSS913AOR, FSS9230D, FSS9230R, FSS923AOD, 10N65, FSYA250D, FSYA250R, GFB50N03, GFB70N03, GFD30N03, GFP50N03, GFP70N03, H5N2001LD