FSS923AOR Datasheet. Specs and Replacement
Type Designator: FSS923AOR 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO257AA
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FSS923AOR substitution
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FSS923AOR datasheet
fss923ao.pdf
FSS923AOD, S E M I C O N D U C T O R FSS923AOR Radiation Hardened, SEGR Resistant February 1998 P-Channel Power MOSFETs Features Description 7A, -200V, rDS(ON) = 0.650 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MOS... See More ⇒
fss9230.pdf
FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 4A, -200V, rDS(ON) = 1.60 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD ... See More ⇒
Detailed specifications: FSS430R, FSS9130D, FSS9130R, FSS913AOD, FSS913AOR, FSS9230D, FSS9230R, FSS923AOD, IRF2807, FSYA250D, FSYA250R, GFB50N03, GFB70N03, GFD30N03, GFP50N03, GFP70N03, H5N2001LD
Keywords - FSS923AOR MOSFET specs
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MOSFET Parameters. How They Affect Each Other
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