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AOB2918L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB2918L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 267 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 1530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-263
 

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AOB2918L datasheet

 ..1. Size:381K  aosemi
 aob2918l.pdf pdf_icon

AOB2918L

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..2. Size:238K  inchange semiconductor
 aob2918l.pdf pdf_icon

AOB2918L

isc N-Channel MOSFET Transistor AOB2918L FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener

 8.1. Size:381K  aosemi
 aob2910l aot2910l aotf2910l.pdf pdf_icon

AOB2918L

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.2. Size:434K  aosemi
 aob2910l.pdf pdf_icon

AOB2918L

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AOB27S60 , AOB280L , AOB282L , AOB284L , AOB286L , AOB288L , AOB290L , AOB2910L , 2SK3878 , AOB292L , AOB296L , AOB298L , AOB29S50 , AOB409L , AOB410L , AOB411L , AOB412L .

 

 
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