AOB2918L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB2918L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 267 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 90 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.9 V

Carga de compuerta (Qg): 38 nC

Tiempo de elevación (tr): 24 nS

Conductancia de drenaje-sustrato (Cd): 1530 pF

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: TO-263

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AOB2918L Datasheet (PDF)

1.1. aob2918l.pdf Size:381K _aosemi

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 7mΩ Power losses are minimized due to an extremely low combination of RDS(ON) and Cr

4.1. aob2910l aot2910l aotf2910l.pdf Size:381K _aosemi

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 24mΩ (* 23.5mΩ) Both conduction and switching power losses are RDS(ON) (at

5.1. aob290l.pdf Size:204K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB290L ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM

5.2. aob296l.pdf Size:281K _aosemi

AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS The AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 10mΩ (< 9.7mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 12.5mΩ (< 12.2mΩ∗) conduction and switching power losses a

5.3. aob2904.pdf Size:362K _aosemi

AOT2904/AOB2904 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 4.4mΩ < 4.2mΩ∗ • Optimized fast-switching applications RDS(ON) (at VGS=6V) < 5.5mΩ < 5.2mΩ∗ Applications • Industrial 100% UIS Tested • BMS battery

5.4. aob2906.pdf Size:372K _aosemi

AOT2906/AOB2906 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A • Low RDS(ON) • Low Gate Charger RDS(ON) (at VGS=10V) < 6.2mΩ < 5.9mΩ∗ • Optimized fast-switching applications RDS(ON) (at VGS=8V) < 7.2mΩ < 6.9mΩ∗ Applications 100% UIS Tested 100% Rg Tested • Synchronous

5.5. aob292l.pdf Size:278K _aosemi

AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary VDS The AOT292L/AOB292L uses Trench MOSFET 100V ID (at VGS=10V) 105A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.1mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 5.3mΩ (< 4.9mΩ∗) conduction and switching power losses a

5.6. aob29s50.pdf Size:324K _aosemi

AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced αMOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15Ω performance and robustness in switching applications. Qg,typ 26.6nC By provi

5.7. aob290l.pdf Size:341K _aosemi

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) losses are minimized due to an extremely low combination of RDS(ON) and Crss.In add

5.8. aob298l.pdf Size:434K _aosemi

AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 14.5mΩ Power losses are minimized due to an extremely low combination of RDS(ON) and C

Otros transistores... AOB27S60 , AOB280L , AOB282L , AOB284L , AOB286L , AOB288L , AOB290L , AOB2910L , IRFP064N , AOB292L , AOB296L , AOB298L , AOB29S50 , AOB409L , AOB410L , AOB411L , AOB412L .

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