All MOSFET. AOB2918L Datasheet

 

AOB2918L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB2918L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 267 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 1530 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO-263

AOB2918L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB2918L Datasheet (PDF)

0.1. aob2918l.pdf Size:381K _aosemi

AOB2918L
AOB2918L

AOT2918L/AOB2918L/AOTF2918L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2918L & AOB2918L & AOTF2918L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

0.2. aob2918l.pdf Size:238K _inchange_semiconductor

AOB2918L
AOB2918L

isc N-Channel MOSFET Transistor AOB2918LFEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

 8.1. aob2910l aot2910l aotf2910l.pdf Size:381K _aosemi

AOB2918L
AOB2918L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

8.2. aob2910l.pdf Size:238K _inchange_semiconductor

AOB2918L
AOB2918L

isc N-Channel MOSFET Transistor AOB2910LFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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