AOB470L Todos los transistores

 

AOB470L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB470L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 268 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0102 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de AOB470L MOSFET

   - Selección ⓘ de transistores por parámetros

 

AOB470L Datasheet (PDF)

 ..1. Size:305K  aosemi
 aob470l.pdf pdf_icon

AOB470L

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 ..2. Size:305K  aosemi
 aot470 aob470l.pdf pdf_icon

AOB470L

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 ..3. Size:923K  cn vbsemi
 aob470l.pdf pdf_icon

AOB470L

AOB470Lwww.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0065 at VGS = 10 V 12080 53.5 nC 100 % Rg and UIS tested0.0010 at VGS = 7.5 V 110 Material categorization:for definitions of compliance please seeDTO-263GSSSDDG

 ..4. Size:253K  inchange semiconductor
 aob470l.pdf pdf_icon

AOB470L

isc N-Channel MOSFET Transistor AOB470LFEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 10.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

MOSTRAR MÁS

Otros transistores... AOB416 , AOB4184 , AOB418L , AOB42S60 , AOB440 , AOB442 , AOB462L , AOB466L , AON7506 , AOB480L , AOB482L , AOB4S60 , AOB7S60 , AOB7S65 , AOC2401 , AOC2403 , AOC2411 .

History: MPSP60M940 | CEB6060L | PJM2301PSA | FQA7N80 | AON6552 | IPP032N06N3G | CEB20P06

 

 
Back to Top

 


 
.