AOB470L Todos los transistores

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 aob470l.pdf

AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary VDS The AOT470/AOB470L uses advanced trench technology 75V and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100A charge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 ..2. Size:305K  aosemi
 aot470 aob470l.pdf

AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary VDS The AOT470/AOB470L uses advanced trench technology 75V and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100A charge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 ..3. Size:923K  cn vbsemi
 aob470l.pdf

AOB470L www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0065 at VGS = 10 V 120 80 53.5 nC 100 % Rg and UIS tested 0.0010 at VGS = 7.5 V 110 Material categorization for definitions of compliance please see D TO-263 G S S S D D G

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 aob470l.pdf

isc N-Channel MOSFET Transistor AOB470L FEATURES Drain Current I =100A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 10.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos