All MOSFET. AOB470L Datasheet


AOB470L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB470L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 268 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 114 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0102 Ohm

Package: TO-263

AOB470L Transistor Equivalent Substitute - MOSFET Cross-Reference Search


AOB470L Datasheet (PDF)

1.1. aob470l.pdf Size:305K _aosemi


AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary VDS The AOT470/AOB470L uses advanced trench technology 75V and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100A charge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V) < 10.5mΩ switching and general purpose applications. 100% UIS Tested 100% Rg Tested TO-263 TO220 D2

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .


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