AOB470L MOSFET. Datasheet pdf. Equivalent
Type Designator: AOB470L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 268 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 114 nC
Rise Time (tr): 39 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0102 Ohm
Package: TO-263
AOB470L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOB470L Datasheet (PDF)
1.1. aob470l.pdf 
Size:305K _aosemi
AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary VDS The AOT470/AOB470L uses advanced trench technology 75V and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100A charge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V) < 10.5mΩ switching and general purpose applications. 100% UIS Tested 100% Rg Tested TO-263 TO220 D2
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
