AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

AOB470Lwww.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0065 at VGS = 10 V 12080 53.5 nC 100 % Rg and UIS tested0.0010 at VGS = 7.5 V 110 Material categorization:for definitions of compliance please seeDTO-263GSSSDDG

isc N-Channel MOSFET Transistor AOB470LFEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 10.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos