AOC2800 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOC2800
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 800 nS
Cossⓘ - Capacitancia de salida: 93 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
Encapsulados: WLCSP
Búsqueda de reemplazo de AOC2800 MOSFET
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AOC2800 datasheet
aoc2800.pdf
AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 30V The AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6A excellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
aoc2804.pdf
AOC2804 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc2804b.pdf
AOC2804B 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
aoc2802.pdf
AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 20V The AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6A excellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
Otros transistores... AOC2412 , AOC2413 , AOC2414 , AOC2415 , AOC2417 , AOC2421 , AOC2422 , AOC2423 , RFP50N06 , AOC2802 , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 .
History: IPI100N08N3
History: IPI100N08N3
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