AOC2800 MOSFET Datasheet: N-Ch, 30V, 6A. Full specification with pinout and replacement list

AOC2800 Specs and Replacement

Type Designator: AOC2800

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 800 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: WLCSP

AOC2800 substitution

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AOC2800 datasheet

..1. Size:244K aosemi
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AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 30V The AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6A excellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V) ... See More ⇒

8.1. Size:363K aosemi
aoc2804.pdf pdf_icon

AOC2804 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

8.2. Size:353K aosemi
aoc2804b.pdf pdf_icon

AOC2804B 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V) ... See More ⇒

8.3. Size:240K aosemi
aoc2802.pdf pdf_icon

AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 20V The AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6A excellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V) ... See More ⇒