AOC2800 - параметры транзистора MOSFET, его аналоги, datasheet

AOC2800 Datasheet (PDF)

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AOC2800Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 30VThe AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)

8.1. Size:363K aosemi
aoc2804.pdf pdf_icon

AOC280420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

8.2. Size:353K aosemi
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AOC2804B20V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

8.3. Size:240K aosemi
aoc2802.pdf pdf_icon

AOC2802Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 20VThe AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)