AOD1N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD1N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 14.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
Encapsulados: TO-252
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AOD1N60 datasheet
aod1n60 aou1n60 aoi1n60.pdf
AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod1n60.pdf
AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod1n60.pdf
isc N-Channel MOSFET Transistor AOD1N60 FEATURES Drain Current I =1.3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 9.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose
Otros transistores... AOC2422 , AOC2423 , AOC2800 , AOC2802 , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , IRF2807 , AOD200 , AOD208 , AOD210 , AOD2210 , AOD240 , AOD242 , AOD254 , AOD2544 .
History: SL4406 | BUK444-200B | TK5A65W | IXFT50N50P3
History: SL4406 | BUK444-200B | TK5A65W | IXFT50N50P3
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