All MOSFET. AOD1N60 Datasheet

 

AOD1N60 Datasheet and Replacement


   Type Designator: AOD1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.1 nC
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 14.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO-252
 

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AOD1N60 Datasheet (PDF)

 ..1. Size:344K  aosemi
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AOD1N60

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:266K  inchange semiconductor
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AOD1N60

isc N-Channel MOSFET Transistor AOD1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: AOC2422 , AOC2423 , AOC2800 , AOC2802 , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , IRFB31N20D , AOD200 , AOD208 , AOD210 , AOD2210 , AOD240 , AOD242 , AOD254 , AOD2544 .

History: SFB068N150C3 | NVBG160N120SC1

Keywords - AOD1N60 MOSFET datasheet

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