AOD242 Todos los transistores

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 aod242.pdf

AOD242 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOD242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 54A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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 aod242.pdf

isc N-Channel MOSFET Transistor AOD242 FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

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 aod240.pdf

AOD240 40V N-Channel MOSFET General Description Product Summary VDS The AOD240 uses Trench MOSFET technology that 40V 70A is uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance. Power losses are

 9.2. Size:836K  cn vbsemi
 aod240.pdf

AOD240 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN

 9.3. Size:264K  inchange semiconductor
 aod240.pdf

isc N-Channel MOSFET Transistor AOD240 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a