AOD24240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOD242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD242FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

AOD24040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD240 uses Trench MOSFET technology that 40V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are

AOD240www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATIN

isc N-Channel MOSFET Transistor AOD240FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a