AOD242
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD242
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 53.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 54
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 405
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058
Ohm
Package:
TO-252
AOD242
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD242
Datasheet (PDF)
..1. Size:283K aosemi
aod242.pdf 
AOD24240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOD242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
..2. Size:266K inchange semiconductor
aod242.pdf
isc N-Channel MOSFET Transistor AOD242FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.1. Size:241K aosemi
aod240.pdf
AOD24040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD240 uses Trench MOSFET technology that 40V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
9.2. Size:836K cn vbsemi
aod240.pdf
AOD240www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATIN
9.3. Size:264K inchange semiconductor
aod240.pdf
isc N-Channel MOSFET Transistor AOD240FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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