AOD242 Datasheet and Replacement
Type Designator: AOD242
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 405 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO-252
AOD242 substitution
AOD242 Datasheet (PDF)
aod242.pdf

AOD24240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOD242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aod242.pdf

isc N-Channel MOSFET Transistor AOD242FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod240.pdf

AOD24040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD240 uses Trench MOSFET technology that 40V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
aod240.pdf

AOD240www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATIN
Datasheet: AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 , AOD210 , AOD2210 , AOD240 , IRF520 , AOD254 , AOD2544 , AOD256 , AOD2606 , AOD2610 , AOD2810 , AOD2816 , AOD2908 .
Keywords - AOD242 MOSFET datasheet
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History: KX10N60F | SMD7N65



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