AOD254 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD254
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD254

AOD254 Datasheet (PDF)

..1. Size:363K aosemi
aod254.pdf

AOD254150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD254 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

..2. Size:223K inchange semiconductor
aod254.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD254FEATURESStatic drain-source on-resistance:RDS(on)46m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-S

0.1. Size:285K aosemi
aod2544.pdf

AOD2544150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)

0.2. Size:264K inchange semiconductor
aod2544.pdf

isc N-Channel MOSFET Transistor AOD2544FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 54m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:302K aosemi
aod256.pdf

AOD256150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD256 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.2. Size:263K inchange semiconductor
aod256.pdf

isc N-Channel MOSFET Transistor AOD256FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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