Справочник MOSFET. AOD254

 

AOD254 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOD254
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AOD254

 

 

AOD254 Datasheet (PDF)

 ..1. Size:363K  aosemi
 aod254.pdf

AOD254 AOD254

AOD254150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD254 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 ..2. Size:223K  inchange semiconductor
 aod254.pdf

AOD254 AOD254

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD254FEATURESStatic drain-source on-resistance:RDS(on)46m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-S

 0.1. Size:285K  aosemi
 aod2544.pdf

AOD254 AOD254

AOD2544150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)

 0.2. Size:264K  inchange semiconductor
 aod2544.pdf

AOD254 AOD254

isc N-Channel MOSFET Transistor AOD2544FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 54m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:302K  aosemi
 aod256.pdf

AOD254 AOD254

AOD256150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD256 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.2. Size:263K  inchange semiconductor
 aod256.pdf

AOD254 AOD254

isc N-Channel MOSFET Transistor AOD256FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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