AOD254
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD254
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046
Ohm
Package:
TO-252
AOD254
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD254
Datasheet (PDF)
..1. Size:363K aosemi
aod254.pdf 
AOD254150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD254 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
..2. Size:223K inchange semiconductor
aod254.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD254FEATURESStatic drain-source on-resistance:RDS(on)46m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-S
0.1. Size:285K aosemi
aod2544.pdf
AOD2544150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)
0.2. Size:264K inchange semiconductor
aod2544.pdf
isc N-Channel MOSFET Transistor AOD2544FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 54m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:302K aosemi
aod256.pdf
AOD256150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD256 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.2. Size:263K inchange semiconductor
aod256.pdf
isc N-Channel MOSFET Transistor AOD256FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
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, IRFP450FI
, IRFP450LC
, IRFP451
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