AOD2816 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD2816
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 154 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD2816

AOD2816 Datasheet (PDF)

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aod2816.pdf

AOD281680V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AOD2816 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 35Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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aod2816.pdf

isc N-Channel MOSFET Transistor AOD2816FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R =15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

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aod2810.pdf

AOD281080V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AOD2810 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

8.2. Size:262K inchange semiconductor
aod2810.pdf

Isc N-Channel MOSFET Transistor AOD2810FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

9.1. Size:453K aosemi
aod280a60.pdf

AOD280A60/AOI280A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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