AOD2816 MOSFET Datasheet: N-Ch, 80V, 35A. Full specification with pinout and replacement list

AOD2816 Specs and Replacement

Type Designator: AOD2816

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-252

AOD2816 substitution

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AOD2816 datasheet

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AOD2816 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 35A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOD2816 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R =15m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

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AOD2810 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:262K inchange semiconductor
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Isc N-Channel MOSFET Transistor AOD2810 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒