AOD468 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD468
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 12.8 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD468

AOD468 Datasheet (PDF)

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aod468.pdf

AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss

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aod468 aoi468.pdf

..3. Size:266K inchange semiconductor
aod468.pdf

isc N-Channel MOSFET Transistor AOD468FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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aod466.pdf

AOD466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD466 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 30A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

9.2. Size:147K aosemi
aod464.pdf

AOD464N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD464 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)

9.3. Size:509K aosemi
aod460.pdf

AOD460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD460 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

9.4. Size:1760K kexin
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SMD Type MOSFETN-Channel Enhancement MOSFET AOD464 (KOD464)TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) =105V ID = 40A (VGS = 10V)4 RDS(ON) 28m (VGS = 10V) @20A RDS(ON) 31m (VGS = 6V)0.1270.80+0.1 max-0.11 Gate+ 0.12.3 0.60- 0.12 Drain+0.153 Source4.60 -0.154 Drain

9.5. Size:860K cn vbsemi
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AOD464www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

9.6. Size:265K inchange semiconductor
aod464.pdf

isc N-Channel MOSFET Transistor AOD464FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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