AOD468
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD468
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 11.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12.8
nC
trⓘ - Rise Time: 31
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42
Ohm
Package:
TO-252
AOD468
Datasheet (PDF)
..1. Size:306K aosemi
aod468.pdf 
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
..2. Size:306K aosemi
aod468 aoi468.pdf
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
..3. Size:266K inchange semiconductor
aod468.pdf
isc N-Channel MOSFET Transistor AOD468FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.1. Size:152K aosemi
aod466.pdf
AOD466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD466 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 30A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)
9.2. Size:147K aosemi
aod464.pdf
AOD464N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD464 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)
9.3. Size:509K aosemi
aod460.pdf
AOD460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD460 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
9.4. Size:1760K kexin
aod464.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET AOD464 (KOD464)TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) =105V ID = 40A (VGS = 10V)4 RDS(ON) 28m (VGS = 10V) @20A RDS(ON) 31m (VGS = 6V)0.1270.80+0.1 max-0.11 Gate+ 0.12.3 0.60- 0.12 Drain+0.153 Source4.60 -0.154 Drain
9.5. Size:860K cn vbsemi
aod464.pdf
AOD464www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless
9.6. Size:265K inchange semiconductor
aod464.pdf
isc N-Channel MOSFET Transistor AOD464FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: WPB4002
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