AOD468 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD468
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 300 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 11.5 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 12.8 nC
Время нарастания (tr): 31 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.42 Ohm
Тип корпуса: TO-252
AOD468 Datasheet (PDF)
aod468.pdf
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
aod468 aoi468.pdf
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
aod468.pdf
isc N-Channel MOSFET Transistor AOD468FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aod466.pdf
AOD466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD466 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 30A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)
aod464.pdf
AOD464N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD464 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)
aod460.pdf
AOD460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD460 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod464.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET AOD464 (KOD464)TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) =105V ID = 40A (VGS = 10V)4 RDS(ON) 28m (VGS = 10V) @20A RDS(ON) 31m (VGS = 6V)0.1270.80+0.1 max-0.11 Gate+ 0.12.3 0.60- 0.12 Drain+0.153 Source4.60 -0.154 Drain
aod464.pdf
AOD464www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless
aod464.pdf
isc N-Channel MOSFET Transistor AOD464FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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