AOD480 Todos los transistores

 ..1. Size:262K  aosemi
 aod480.pdf

AOD480 30V N-Channel MOSFET 1.4 General Description Features VGS=10V, ID=18A The AOD480 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 ..2. Size:264K  inchange semiconductor
 aod480.pdf

isc N-Channel MOSFET Transistor AOD480 FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ap

 9.1. Size:299K  aosemi
 aod482.pdf

AOD482/AOI482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 32A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 9.2. Size:299K  aosemi
 aod482 aoi482.pdf

AOD482/AOI482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 32A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 9.3. Size:193K  aosemi
 aod484.pdf

AOD484 30V N-Channel MOSFET General Description Features The AOD484 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 25 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.4. Size:150K  aosemi
 aod486a.pdf

AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD486A uses advanced trench technology and VDS (V) = 40V design to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V) charge.This device is suitable for use in PWM, load RDS(ON)

 9.5. Size:190K  aosemi
 aod488.pdf

AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and VDS (V) = 40V design to provide excellent RDS(ON) with low gate ID = 20 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.6. Size:263K  inchange semiconductor
 aod482.pdf

isc N-Channel MOSFET Transistor AOD482 FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 37m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.7. Size:262K  inchange semiconductor
 aod484.pdf

Isc N-Channel MOSFET Transistor AOD484 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage