AOD480 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD480
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 21 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.6 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 2.8 ns
Cossⓘ - Выходная емкость: 67 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: TO-252
AOD480 Datasheet (PDF)
aod480.pdf
AOD48030V N-Channel MOSFET1.4General Description FeaturesVGS=10V, ID=18AThe AOD480 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)
aod480.pdf
isc N-Channel MOSFET Transistor AOD480FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap
aod482.pdf
AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aod482 aoi482.pdf
AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aod484.pdf
AOD48430V N-Channel MOSFETGeneral Description FeaturesThe AOD484 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod486a.pdf
AOD486AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD486A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V)charge.This device is suitable for use in PWM, load RDS(ON)
aod488.pdf
AOD488N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD488 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod482.pdf
isc N-Channel MOSFET Transistor AOD482FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod484.pdf
Isc N-Channel MOSFET Transistor AOD484FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F