AOD480
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD480
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 21
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 2.8
nS
Cossⓘ -
Output Capacitance: 67
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
TO-252
AOD480
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD480
Datasheet (PDF)
..1. Size:262K aosemi
aod480.pdf 
AOD48030V N-Channel MOSFET1.4General Description FeaturesVGS=10V, ID=18AThe AOD480 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)
..2. Size:264K inchange semiconductor
aod480.pdf
isc N-Channel MOSFET Transistor AOD480FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap
9.1. Size:299K aosemi
aod482.pdf
AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
9.2. Size:299K aosemi
aod482 aoi482.pdf
AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
9.3. Size:193K aosemi
aod484.pdf
AOD48430V N-Channel MOSFETGeneral Description FeaturesThe AOD484 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
9.4. Size:150K aosemi
aod486a.pdf
AOD486AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD486A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V)charge.This device is suitable for use in PWM, load RDS(ON)
9.5. Size:190K aosemi
aod488.pdf
AOD488N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD488 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
9.6. Size:263K inchange semiconductor
aod482.pdf
isc N-Channel MOSFET Transistor AOD482FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.7. Size:262K inchange semiconductor
aod484.pdf
Isc N-Channel MOSFET Transistor AOD484FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
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