AOD508 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD508FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AOD50225V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

AOD50425V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD502FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap

isc N-Channel MOSFET Transistor AOD504FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose