AOD508 Todos los transistores

 ..1. Size:302K  aosemi
 aod508.pdf

AOD508/AOI508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:302K  aosemi
 aod508 aoi508.pdf

AOD508/AOI508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

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 aod508.pdf

isc N-Channel MOSFET Transistor AOD508 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:283K  aosemi
 aod502.pdf

AOD502 25V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:287K  aosemi
 aod504.pdf

AOD504 25V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:265K  inchange semiconductor
 aod502.pdf

isc N-Channel MOSFET Transistor AOD502 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =25V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ap

 9.4. Size:265K  inchange semiconductor
 aod504.pdf

isc N-Channel MOSFET Transistor AOD504 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =25V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose