AOD508 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD508
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 898 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD508

AOD508 Datasheet (PDF)

..1. Size:302K aosemi
aod508.pdf

AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

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aod508 aoi508.pdf

AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

..3. Size:265K inchange semiconductor
aod508.pdf

isc N-Channel MOSFET Transistor AOD508FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:283K aosemi
aod502.pdf

AOD50225V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:287K aosemi
aod504.pdf

AOD50425V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

9.3. Size:265K inchange semiconductor
aod502.pdf

isc N-Channel MOSFET Transistor AOD502FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap

9.4. Size:265K inchange semiconductor
aod504.pdf

isc N-Channel MOSFET Transistor AOD504FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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