AOD508 PDF and Equivalents Search

 

AOD508 Specs and Replacement

Type Designator: AOD508

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 898 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-252

AOD508 substitution

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AOD508 datasheet

 ..1. Size:302K  aosemi
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AOD508

AOD508/AOI508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:302K  aosemi
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AOD508

AOD508/AOI508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..3. Size:265K  inchange semiconductor
aod508.pdf pdf_icon

AOD508

isc N-Channel MOSFET Transistor AOD508 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

 9.1. Size:283K  aosemi
aod502.pdf pdf_icon

AOD508

AOD502 25V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOD496A, AOD498, AOD4N60, AOD4S60, AOD4T60, AOD4T60P, AOD502, AOD504, IRFP450, AOD510, AOD514, AOD516, AOD526, AOD528, AOD536, AOD538, AOD5N40

Keywords - AOD508 MOSFET specs

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