AOD508 - описание и поиск аналогов

AOD508/AOI508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

AOD508/AOI508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD508 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

AOD502 25V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

AOD504 25V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD502 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =25V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ap

isc N-Channel MOSFET Transistor AOD504 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =25V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose