AOD8N25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD8N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 78 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 51 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.56 Ohm
Encapsulados: TO-252
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AOD8N25 datasheet
aod8n25 aoi8n25.pdf
AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 300V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 8A popular AC-DC applications. RDS(ON) (at VGS=10V)
aod8n25.pdf
AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 300V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 8A popular AC-DC applications. RDS(ON) (at VGS=10V)
aod8n25.pdf
isc N-Channel MOSFET Transistor AOD8N25 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R =0.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
Otros transistores... AOD603A , AOD607 , AOD609 , AOD6N50 , AOD7N60 , AOD7N65 , AOD7S60 , AOD7S65 , 2N60 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , AOH3106 , AOH3110 , AOI11S60 , AOI1N60 .
History: WMS08DH04T1
History: WMS08DH04T1
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